Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide

Source: arxiv.org/abs/2609.09805

Fedor Dzmitryevich Hrunski, Daniel Scheller, Maximilian Hollendonner, Kim Ullerich, Shravan Kumar Parthasarathy, Chiun Fu, Andre Pointner, Wolfgang Knolle, Florian Kaiser, Durga Bhaktavatsala Rao Dasari, Roland Nagy

arXivarxiv/2609.09805Sep 9, 2026quant-phscore 0

Distributed quantum networks rely on spatially separated, independently operated quantum systems as network nodes, whose emitted photons must be interfered with high visibility to establish end-to-end entanglement. Crucially, for network-relevant applications, high visibilities must be achieved over prolonged timescales to reduce overheads for error correction, and to increase network rates. Here, we demonstrate experimentally that silicon vacancy $\mathrm{V_{Si}}$ color centers in silicon carbide (SiC) achieve these requirements, notably in a mass-deployable fashion. We integrate…

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