In-Substrate Imaging of Diamond hBN FET Current via Widefield Quantum Diamond Microscopy

Source: arxiv.org/abs/2601.15355

Anuj Bathla, Subrat Kumar Pradhan, Ajit Kumar Dash, Prabhat Anand, M. Girish Chandra, Kenji Watanabe, Takashi Taniguchi, Akshay Singh, Veeresh Deshpande, Kasturi Saha

arXivarxiv/2601.15355Jan 21, 2026cond-mat.mes-hallscore 0

We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydrogen termination of the diamond surface induces a two dimensional hole gas (2DHG), while an ensemble of near surface NV centers located $ \sim 1~μm$ below the surface enables noninvasive magnetic imaging of current flow with micrometer scale spatial resolution. The FETs were electrically characterized over a range of drain source biases $V_{ds}= 0$ to $-15V$ and gate voltages,$V_{gs}= +3$ to $-9V$ followed by in situ…

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