{"id":"arxiv/2611.01214","url":"https://arxiv.org/abs/2611.01214","tags":["quant-ph","cond-mat.mes-hall","cond-mat.mtrl-sci"],"score":0,"title":"Cooling-path-selected self-assembly of telecom InAsP quantum dots","domain":"quant-ph","source":"arxiv","authors":["Yiteng Zhang","Doaa Abdelbarey","Markus Etzkorn","Zenghui Jiang","Ankita Choudhary","Andreas Schaate","Tom Fandrich","Xin Cao","Chenxi Ma","Arijit Chakraborty","Eddy Patrick Rugeramigabo","Michael Zopf","Fei Ding"],"reviews":0,"subject":"quant-ph","summary":"Epitaxial quantum dots are leading solid-state sources of quantum light, but reproducible growth on indium phosphide (InP) remains challenging because dot-formation windows are narrow and emission wavelengths are difficult to predict. Here we report a new epitaxial route for InAsP quantum dots on InP(001), in which the cooling path selects the final morphology without intentional deposition of group-III dot material. High-temperature As exposure forms a shallow near-surface InAsP layer through As-P exchange; the cooling path and continued As supply determine whether three-dimensional islands…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-10-31","reactions":{}}